Generation of sequences of strong electric monopulses in nitride films

This paper presents theoretical investigation of the excitation sequences strong nonlinear monopulses space charge waves from input small envelope pulses with microwave carrier frequencies due to negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for 3D simulations. electric field 3 - 10 ps durations each can be excited. bias should chosen slightly higher than threshold values observing conductivity. doping levels moderate 1016 -1017 cm-3in films ? 2 mm thicknesses. exciting amplitudes are up 30 GHz films, whereas they lower, 20 GHz. high peak excited both uniform nitride non-uniform These differ domains fields bulk semiconductors. In inhomogeneity near end film output rather domains.